Heterogeneously integrated 2.0 μm CW hybrid silicon lasers at room temperature.
نویسندگان
چکیده
Here we experimentally demonstrate room temperature, continuous-wave (CW), 2.0 μm wavelength lasers heterogeneously integrated on silicon. Molecular wafer bonding of InP to Si is employed. These hybrid silicon lasers operate CW up to 35°C and emit up to 4.2 mW of single-facet CW power at room temperature. III-V tapers transfer light from a hybrid III-V/silicon optical mode into a Si waveguide mode. These lasers enable the realization of a number of sensing and detection applications in compact silicon photonic systems.
منابع مشابه
High-brightness lasers on silicon by beam combining
High-brightness lasers are widely used in fields such as spectroscopy, infrared countermeasures, free-space communication, and industrial manufacturing. Integration of a broad-band, multi-spectral laser is made possible by heterogeneously integrating multiple gain materials on one silicon (Si) substrate chip. A single multi-spectral output with high beam quality can be achieved by wavelength be...
متن کاملHeterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recent...
متن کاملSemiconductor optical amplifiers at 2.0-μm wavelength heterogeneously integrated on silicon
We report the first semiconductor optical amplifiers at 2.0-μm wavelength, heterogeneously integrated by bonding an InP-based active region to silicon. On-chip gain larger than 10 dB is observed at 20°C over a 40-nm bandwidth. OCIS codes: (130.3120) Integrated optics devices, (230.4480) Optical amplifiers.
متن کاملReflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon.
We present measurements of relative intensity noise versus various levels of optical feedback for 1.3 μm quantum dot lasers epitaxially grown on silicon for the first time. A systematic comparison is made with heterogeneously integrated 1.55 μm quantum well lasers on silicon. Our results indicate up to 20 dB reduced sensitivity of the quantum dot lasers on silicon compared to the quantum wells.
متن کاملSilicon arrayed waveguide gratings at 2.0-μm wavelength characterized with an on-chip resonator.
Low-loss arrayed waveguide gratings (AWGs) are demonstrated at a 2.0-μm wavelength. These devices promote rapidly developing photonic applications, supported by the recent development of mid-infrared lasers integrated on silicon (Si). Multi-spectral photonic integrated circuits at 2.0-μm are envisioned since the AWGs are fabricated with the 500-nm-thick Si-on-insulator platform compatible with ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Optics letters
دوره 40 7 شماره
صفحات -
تاریخ انتشار 2015